High T_c superconducting B1 phase MoN films prepared by low-energy ion-assisted depositionSAVVIDES, N.Journal of applied physics. 1987, Vol 62, Num 2, pp 600-610, issn 0021-8979Article

Deposition parameters and film properties of hydrogenated amorphous silicon prepared by high rate dc planar magnetron reactive sputteringSAVVIDES, N.Journal of applied physics. 1984, Vol 55, Num 12, pp 4232-4238, issn 0021-8979Article

Optical constants and associated functions of metastable diamondlike amorphous carbon films in the energy range 0.5-7.3 eVSAVVIDES, N.Journal of applied physics. 1986, Vol 59, Num 12, pp 4133-4145, issn 0021-8979Article

ALTERING THE THERMAL CONDUCTIVITY OF PHOSPHORUS-DOPED SI-GE ALLOYS BY THE PRECIPITATION OF DOPANTSAVVIDES N; ROWE DM.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 2; PP. 299-304; BIBL. 19 REF.Article

ON THE BOUNDARY SCATTERING OF PHONONS IN SILICONSAVVIDES N; GOLDSMID HJ.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. K13-K14; BIBL. 3 REF.Article

BOUNDARY SCATTERING OF PHONONS IN FINE-GRAINED HOT-PRESSED GE-SI ALLOYS. I: THE DEPENDENCE OF LATTICE THERMAL CONDUCTIVITY ON GRAIN SIZE AND POROSITYSAVVIDES N; GOLDSMID HJ.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 25; PP. 4657-4670; BIBL. 24 REF.Article

Effects of hydrogenation and doping on the conductivity and density of defect states in amorphous siliconSAVVIDES, N.Journal of applied physics. 1984, Vol 56, Num 10, pp 2788-2792, issn 0021-8979Article

The role of solitons and the kinetics of precipitate growth in boron doped silicon-germanium alloysSAVVIDES, N.Journal of applied physics. 1983, Vol 54, Num 5, pp 2402-2406, issn 0021-8979Article

PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTIONS IN SI-GE ALLOYS AND ITS EFFECT ON THERMOELECTRIC TRANSPORT PROPERTIESSAVVIDES N; ROWE DM.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 4; PP. 723-732; BIBL. 21 REF.Article

BOUNDARY SCATTERING OF PHONONS IN FINE-GRAINED HOT-PRESSED GE-SI ALLOYS. II: THEORYSAVVIDES N; GOLDSMID HJ.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 25; PP. 4671-4678; BIBL. 20 REF.Article

ON THE BOUNDARY SCATTERING OF PHONONS IN SILICONSAVVIDES N; GOLDSMID HJ.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 1; PP. K13-K14; BIBL. 3 REF.Article

APPARATUS FOR THE MEASUREMENT OF THERMAL DIFFUSIVITY FEATURING A LOW-FREQUENCY SINE-WAVE GENERATOR AND A DIGITAL PHASE METERSAVVIDES N; MURRAY W.1978; J. PHYS. E; GBR; DA. 1978; VOL. 11; NO 9; PP. 941-947; BIBL. 12 REF.Article

Four-fold to three-fold transition in diamond-like amorphous carbon films: a study of optical and electrical propertiesSAVVIDES, N.Journal of applied physics. 1985, Vol 58, Num 1, pp 518-521, issn 0021-8979Article

THE REVERSAL OF PRECIPITATION IN HEAVILY DOPED SILICON-GERMANIUM ALLOYSROWE DM; SAVVIDES N.1979; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1979; VOL. 12; NO 9; PP. 1613-1619; BIBL. 13 REF.Article

ELECTRICAL RESISTIVITY OF SOME NIOBIUM A15 COMPOUNDS = RESISTIVITE ELECTRIQUE DE QUELQUES COMPOSES A15 DU NIOBIUMSAVVIDES N; HURD CM; MCALISTER SP et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 10; PP. 735-738; BIBL. 20 REF.Article

PHONON SCATTERING AT GRAIN BOUNDARIES IN HEAVILY DOPED FINE-GRAINED SILICON-GERMANIUM ALLOYSROWE DM; SHUKLA VS; SAVVIDES N et al.1981; NATURE (LOND.); ISSN 0028-0836; GBR; DA. 1981; VOL. 290; NO 5809; PP. 765-766; BIBL. 13 REF.Article

PRECIPITATION EFFECTS IN HEAVILY DOPED N-TYPE SILICON-GERMANIUM ALLOYSSAVVIDES N; ROWE DM; SHUKLA VS et al.1980; INTERNATIONAL CONFERENCE ON THERMOELECTRIC ENERGY CONVERSION. 3/1980/ARLINGTON TX; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONIC ENGINEERS; DA. 1980; PP. 57-59; BIBL. 12 REF.Conference Paper

ELECTRICAL CONDUCTION IN GRANULAR CU-SIO₂ FILMSSAVVIDES N; MCALISTER SP; HURD CM et al.1982; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 12; PP. 1484-1489; ABS. FRE; BIBL. 14 REF.Article

Growth and evolution of microstructure of epitaxial YBa₂Cu₃O_7-x ultrathin and thin films on MgOSAVVIDES, N; KATSAROS, A.Physica. C. Superconductivity. 1994, Vol 226, Num 1-2, pp 23-36, issn 0921-4534Article

Evolution of texture of CeO₂ thin film buffer layers prepared by ion-assisted depositionGNANARAJAN, S; SAVVIDES, N.Thin solid films. 1999, Vol 350, Num 1-2, pp 124-129, issn 0040-6090Article

In situ growth of epitaxial YBa₂Cu₃O₇ thin films by on-axis unbalanced direct current magnetron sputteringSAVVIDES, N; KATSAROS, A.Applied physics letters. 1993, Vol 62, Num 5, pp 528-530, issn 0003-6951Article

A two-band model applied to resistivity data on a superconducting ceramic specimen of YBa₂Cu₃O_7-xEAGLES, D. M; SAVVIDES, N.Physica. C, Superconductivity. 1989, Vol 158, Num 1-2, pp 258-264Article

Microhardness and Young's modulus of diamond and diamondlike carbon filmsSAVVIDES, N; BELL, T. J.Journal of applied physics. 1992, Vol 72, Num 7, pp 2791-2796, issn 0021-8979Article

AC susceptibility of a monofilament Bi-2223/Ag superconducting tape in a perpendicular fieldSAVVIDES, N; MÜLLER, K.-H.Physica. C. Superconductivity and its applications. 1999, Vol 314, Num 3-4, pp 183-188Article

Electrical transport, optical properties, and structure of TiN films synthesized by low-energy ion assisted depositionSAVVIDES, N; WINDOW, B.Journal of applied physics. 1988, Vol 64, Num 1, pp 225-234, issn 0021-8979Article